Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > OECC > 1996 > 19D1 > 19D1.4
  • First Optoelectronics and Communications Conference
  • Technical Digest Series (Optica Publishing Group, 1996),
  • paper 19D1.4

Fabrication of InGaAs/GaAs Vertical Cavity Surface Emitting Lasers Grown on GaAs(311)A Substrates

M. Takahashi, P. Vaccaro, K. Fujita, T. Watanabe, T. Mukaihara, F. Koyama, and K. Iga

Not Accessible

Your library or personal account may give you access

Abstract

We have demonstrated a low threshold current density for vertical cavity surface emitting lasers fabricated on a GaAs(311)A substrate by MBE. A threshold current density of 160 A/cm2 was obtained under continuous wave operation at room temperature.

© 1996 IEICE

PDF Article
More Like This
Polarization Characteristics of InGaAs/GaAs Vertical Cavity Surface Emitting Lasers Grown on GaAs(311)A-Oriented Substrates

M. Takahashi, P. Vaccaro, K. Fujita, T. Watanabe, T. Mukaihara, F. Koyama, and K. Iga
CMC3 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1996

A low-threshold and polarization-controlled vertical-cavity, surface-emitting laser grown on GaAs (311)B substrate by MOCVD

A. Mizutani, N. Hatori, N. Nishiyama, F. Koyama, and K. Iga
CWF28 Conference on Lasers and Electro-Optics (CLEO:S&I) 1998

Threshold Reduction of Polarization Controlled InGaAs/GaAs Vertical-Cavity Surface Emitting Lasers on GaAs (311)B Substrates

Nobuhiko Nishiyama, Satoshi Shinada, Masakazu Arai, Fumio Koyama, and Kenichi Iga
SMD3 Spatial Light Modulators and Integrated Optoelectronic Arrays (SLM) 1999

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use