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Conferences > CLEO_Europe > 1996 > CTuH > CTuH5

Carrier Dynamics in 155 µm InAlGaAs Quantum Well Laser Structures

S. Marcinkevičius, H. Hillmer, R. Lösch, and U. Olin

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Abstract

There are several effects that make InAlGaAs/InP material system advantageous over the commonly used InGaAsP/InP system for implementing 1.3 and 1.55 µm quantum well (QW) lasers. These effects are related to different band offsets and include better electron confinement, faster interwell hole transport, higher differential gain and lower gain suppression. However, due to technological difficulties, the InAlGaAs material system has been far less investigated and applied.

© 1996 IEEE

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