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Photoexcited carrier transport in InGaAsP/InP quantum well laser structures

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Abstract

We present first measurements of carrier transport in 1.55 μm InGaAsP/InP graded-index separate-confinement heterostructure (GRINSCH) multiple quantum well (QW) laser structures by means of time-resolved photoluminescence (PL). The high temporal resolution of the PL upconversion techniques enables explicitly monitor the carrier transport and draw conclusions about the transport mechanisms.

© 1994 IEEE

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