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We have used AlGaAs/InGaAs and InGaAs/InGaAsP strained quantum well broad area lasers grown by metal organic chemical vapor deposition to study their high power and degradation characteristics. Laser facets are passivated with zinc selenide and low reflectivity (LR=5%) and high reflectivity (HR=95%) SiO2/Si coated using vacuum deposition1. These lasers emit in the vicinity of 1000 nm with external quantum efficiency of 70 to 85%. Series resistance of 0.1 to 0.3 Ohm and thermal resistance of 3 to 5 K/ W for lasers with 0.1 mm stripe width and 0.8 to 1.5 mm cavity length are typical for these lasers when mounted on copper heat sinks using lead-tin solder.
© 1996 IEEE
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