Abstract

GaAs and AlGaAs grown by molecular beam epitaxy at low substrate temperatures of about 200°C (LT-(Al)GaAs) are known to posses attractive electrical and optica] properties. After annealing at higher temperatures (~ 600°C) these materials exhibit a high specific resistance up to 10⁷Ωcm for LT-GaAs and up to 10¹²Ωcm for LT-AlGaAs. This results in high breakdown fields (5 10⁵ Vcm⁻¹) which are very appealing for fast modulator and detector structures, especially in combination with ultra short photoexcited carrier lifetimes in the sub-picosecond range.

© 1996 IEEE