Spectrally and Temporally Resolved Investigations of the Carrier Dynamics in Biased Low Temperature Grown GaAs

S. Tautz; S. Opel; S. Opel; P. Kiesel; S.U. Dankowski; H. M. Hauenstein; H. M. Hauenstein; A. Seilmeier; A. Seilmeier; M. Krause; U.D. Keif; U.D. Keif; G. H. Döhler

European Quantum Electronics Conference
Technical Digest Series (Optica Publishing Group, 1998),
paper QMC4

Spectrally and Temporally Resolved Investigations of the Carrier Dynamics in Biased Low Temperature Grown GaAs

S. Tautz, S. Opel, P. Kiesel, S.U. Dankowski, H. M. Hauenstein, A. Seilmeier, M. Krause, U.D. Keif, and G. H. Döhler

European Quantum Electronics Conference 1998

Glasgow, Scotland United Kingdom
14–18 September 1998
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Ultrafast Solid State Phenomena (QMC)

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S. Tautz, S. Opel, P. Kiesel, S. U. Dankowski, H. M. Hauenstein, A. Seilmeier, M. Krause, U. D. Keif, and G. H. Döhler, "Spectrally and Temporally Resolved Investigations of the Carrier Dynamics in Biased Low Temperature Grown GaAs," in European Quantum Electronics Conference, Technical Digest Series (Optica Publishing Group, 1998), paper QMC4.

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Abstract

Gallium Arsenide grown by molecular beam epitaxy at low substrate temperatures around 200°C (LT-GaAs) exhibits ultrashort lifetimes of photogenerated carriers in the subpicosecond range. In combination with its semi-isolating behavior (specific resistance up to 10⁷Ωcm) and the high breakdown fields (500kV/cm) after thermal annealing (≈600°C) LT- GaAs is well suited for high speed electro-optical devices like metal-semiconductor-metal (MSM) detectors. In general an operation voltage is required for all devices. Therefore, it is essential to understand the influence of an electric field on the carrier dynamics.

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