Abstract

Nitride semiconductor alloys have emerged as the most promising materials for short wave lengths ligth emitting diodes (LEDs) and laser diodes (LDs). The GaInN multiquantum wells (MQW) structure was used as the active part of LDs and have presently proven to work at room temperature for 10 000 hrs. These achievements would have not been possible without the emergence of new approaches in heteroepitaxy of GaN leading to layers zexhibiting lower dislocations densities than those grown using conventional heteroepitaxy. With the Epitaxial Lateral Overgrowth (ELOG), high quality GaN layers have been obtained. Consequently, laser diodes structures were grown on these new generation of substrates.

© 1998 IEEE