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In spite of advances that have led to the demonstration of a 1000 hour cw blue InGaN QW diode laser, as well of the demonstration of cw operation on a SiC substrate [1], major unanswered questions exist about the physics of optical gain in this disordered QW system, given the large departure of InGaN from a random alloy in terms of microscopic scale In-compositional fluctuations. We have reported on gain spectra obtained on InGaN/GaN pn-junction heterostructures [2]. Useful information has been acquired but spectroscopic details were incomplete.
© 1998 IEEE
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