Abstract

The technique of high-energy ion irradiation is an interesting alternative to low-temperature epitaxy for reducing the absorption relaxation time in semiconductor materials. The possibility of creating defects of particular structures by heavy-ion irradiation was suggested as early as in 1980, but experimental works^[1] only gave indirect indications of this possibility. To our knowledge, there are no comparative measurements of irradiated materials directly showing the particular properties of heavy-ion irradiation for applications to fast and efficient saturable absorbers.

© 1998 IEEE