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Design and characterisation of an Indium Gallium Arsenide Multiple Quantum well modulator operating with 5 Volts

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Abstract

Design and characteristaion of a Fabry-Perot InGaAs MOW pin diode modulator operating at 5 Volts is described. The modulator is optimised to give maximum reflectivity change, but still compatible with high speed and detector operation.

© 1998 IEEE

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