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Conferences > CLEO_Europe > 1998 > CWG > CWG3

Monolithic integration of InGaAs-InAlGaAs optoelectronic devices for 1.55µm emission by quantum well intermixing

O. P. Kowalski, S. D. McDougall, J. H. Marsh, A. C. Bryce, and C. N. Ironside

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Abstract

A novel quantum well intermixing (QWI) technique1 has been used to achieve substantial band gap shifts in the InGaAs-InAlGaAs material system enabling the first demonstration of monolithically integrated devices in this system. Wavelength tuned lasers have also been fabricated, displaying a tuning range up to 150 nm.

© 1998 IEEE

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