Abstract

Form-birefringent, oxidized AlGaAs multilayer waveguides have recently drawn attention in the context of critical phase matching of χ⁽²⁾ optical processes.[1] In particular, experimental evidence has been produced of nearly degenerate parametric fluorescence around 2μm.) [2] a necessary step towards the realization of an optical parametric oscillator integrated on a GaAs electronic chip. However, several conditions need be satisfied concerning epitaxial growth, waveguide etching, and oxidation control to the extent of phase-matching and loss reduction. Presently, a critical issue is the knowledge of the refractive indices of AlGaAs and oxidized AlAs layers. Phase matching of these nonlinear waveguides has indeed increased significantly the requirements on material knowledge, as compared to other existing devices. In this Communication we report on accurate measurements of layer thicknesses, modal effective indices and guided-wave losses.

© 2000 IEEE