Abstract

The suppression of intensity noise in the light from semiconductor laser and light-emitting diodes below the full shot noise level has been demonstrated for a variety of semiconductor junction light-emitters Recent work [1] has shown that cooled transverse junction stripe GaAs-AlGaAs lasers grown with high As:Ga ratios are 4-5 dB quieter than the standard quantum limit (full shot noise) when strongly pumped. Similar quieting levels have been obtained with externally stabilised MQW lasers. The high bias currents at which these levels of noise suppression are obtained are generally too high to be useful in small signal applications. Nevertheless there is some interest in exploring circuit and device topologies employing quantum noise-suppressed “quiet-light” in the expectation that low threshold microcavity quiet-light emitters will become available in the future

© 2000 IEEE