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Monolithically Integrated Transverse Junction Stripe Lasers with Rib Waveguides in GaAs/AlGaAs

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Abstract

Complete integration of optical laser sources and waveguides with electronics on a single semiconductor wafer has been a long sought after and elusive goal. Future development of optoelectronic integrated circuits (OEICs) hinges on the development of monolithically integrated laser/waveguide systems with low threshold currents and high injection efficiency into the passive waveguide. This paper reports progress in developing just such a high efficiency Transverse Junction Stripe1 (TJS) laser source integrated with an external passive waveguide suitable for optical interconnection applications. Threshold current as low as 60 mA and injection efficiencies as high as 40% are reported.

© 1988 Optical Society of America

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