Abstract

InP- and GaAs-based air-gap vertical cavity surface emitting laser (VCSEL) structures are very important for the fabrication of tunable VCSELs. Generally air-gaps are formed by undercutting the sacrificial layer between the active cavity material and the top DBR using either chemical or dry etching. The resulting air-gap structures are very fragile and special precautions need to be introduced in the fabrication process, also application of these devices is restricted.

© 2000 IEEE