Electrical noise characterisation of n-type-doped Distributed Bragg Mirrors

G. Belleville; P Signoret; B Orsal; M Wintrebert-Fouquet; M Wintrebert-Fouquet; A Plais; A Plais; J Jacquet; J Jacquet

Conference on Lasers and Electro-Optics Europe
Technical Digest Series (Optica Publishing Group, 2000),
paper CWF66

Electrical noise characterisation of n-type-doped Distributed Bragg Mirrors

G. Belleville, P Signoret, B Orsal, M Wintrebert-Fouquet, A Plais, and J Jacquet

The European Conference on Lasers and Electro-Optics 2000

Nice France
10–15 September 2000
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G. Belleville, P. Signoret, B. Orsal, M. Wintrebert-Fouquet, A. Plais, and J. Jacquet, "Electrical noise characterisation of n-type-doped Distributed Bragg Mirrors," in Conference on Lasers and Electro-Optics Europe, Technical Digest Series (Optica Publishing Group, 2000), paper CWF66.

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Abstract

Electrical performance of Vertical Cavity Surface Emitting Lasers (VCSELs) is closely linked to the electrical characteristic of their mirrors, the Distributed Bragg Reflectors (DBRs). Here, we present static and electrical noise characterisation of two different n-type-doped semiconductor DBRs which are grown on InP substrate [1]. The material systems are GaAs/AlAs and InGaAsP/InP. The layers are designed for 1.55 μm operation. The GaAs/AlAs samples consist of 65 periods, the InGaAsP/InP have 10 periods. The doping level is 10¹⁸ cm⁻³ in all samples. The structures were patterned and passivated with 50 μm mesas diameters and top AuGeNi and TiPtAu ohmic contacts were deposited for GaAs and InP based mirrors respectively.

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