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Conferences > CLEO_Europe > 2000 > CTuK > CTuK83
  • Conference on Lasers and Electro-Optics Europe
  • Technical Digest Series (Optica Publishing Group, 2000),
  • paper CTuK83

Ultrafast optically induced reflectivity switching at a gallium-silica interface

A. V. Rode, B. Luther-Davies, M. Samoc, K. MacDonald, and N. I. Zheludev

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Abstract

It was reported recently that the reflectivity of a gallium-silica interface held close to, but below, the gallium melting point of 29.8°C can be changed significantly (>40%) by light over a very broad spectral range 400 – 1600 nm [1]. The effect has been attributed to a surface-assisted phase transition from the stable α-gallium phase to a phase of metallic nature. In this paper we present the results on the ultrafast switching dynamics of a gallium-silica interface.

© 2000 IEEE

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