InGaAsSb(Gd)/InAsSbP double heterostructure lasers λ=3.0÷3.3 μm for diode laser spectroscopy

N.V. Zotova; M. Aidaraliev; T. Beyer; T. Beyer; S.A. Karandashov; B.A. Matveev; M.A. Remennyi; N.M. Stus’; G.N. Talalakin

Conference on Lasers and Electro-Optics Europe
Technical Digest Series (Optica Publishing Group, 2000),
paper CWF85

InGaAsSb(Gd)/InAsSbP double heterostructure lasers λ=3.0÷3.3 μm for diode laser spectroscopy

N.V. Zotova, M. Aidaraliev, T. Beyer, S.A. Karandashov, B.A. Matveev, M.A. Remennyi, N.M. Stus’, and G.N. Talalakin

The European Conference on Lasers and Electro-Optics 2000

Nice France
10–15 September 2000
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N. V. Zotova, M. Aidaraliev, T. Beyer, S. A. Karandashov, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and G. N. Talalakin, "InGaAsSb(Gd)/InAsSbP double heterostructure lasers λ=3.0÷3.3 μm for diode laser spectroscopy," in Conference on Lasers and Electro-Optics Europe, Technical Digest Series (Optica Publishing Group, 2000), paper CWF85.

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Abstract

Double heterostructures, consisting of an undoped n-InAs (111)A substrate (n=2·10¹⁶ cm⁻³) and three epitaxial layers, were grown by liquid-phase epitaxy: the widegap cladding layer adjacent to the substrate n-InAs_1−x−ySb_xP_y (0.05≤x≤0.09; 0.09≤y≤0.18); the active layer of the laser n-In_1−vGa_vAs_1−wSb_w (v≤0.07; w≤0.07) and the widegap emitter p(Zn)-InAs_1−x−ySb_xP_y (0.05≤x≤0.09; 0.09≤y≤0.18).

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