Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics Europe
  • Technical Digest Series (Optica Publishing Group, 2000),
  • paper CWF97

High-power 1.52-μm AlGaInAs strained multi-quantum well lasers

Not Accessible

Your library or personal account may give you access

Abstract

Eye-safe laser radar, free-space laser communication, and other near-IR illumination technologies are expanding the applications of 1.5 μm lasers, which in the case of AlGaInAs quantum well (QW) devices has traditionally focussed on low-power high-speed telecommunications devices.

© 2000 IEEE

PDF Article
More Like This
High-temperature operation of 1.3-μm AlGaInAs/InP strained multiple quantum well lasers with an AlInAs electron stopper layer

Tsutomu Munakata, Keizo Takemasa, Masao Kabayashi, and Hiroshi Wada
CWL2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1998

High-power laser diodes at 1.48 μm with strained quaternary quantum-well structures

M. Joma, H. Horikawa, Y. Matsui, M. Nakajima, and T. Kamijoh
CWF14 Conference on Lasers and Electro-Optics (CLEO:S&I) 1991

Wide Range 40-GHz Passive Mode-Locking Operation of an AlGaInAs 1.55-μm Strained Quantum Well laser

J. Javaloyes, L. Hou, P. Stolarz, R. P. Green, C. N. Ironside, M. Sorel, J. M. Arnold, A. C. Bryce, and S. Balle
CF1_5 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2009

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.