Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics Europe
  • Technical Digest Series (Optica Publishing Group, 2000),
  • paper CWF96

Pulsed-Laser-Induced Quantum Well Intermixing in GaInAs/GaInAsP Laser Structures

Not Accessible

Your library or personal account may give you access

Abstract

The application of postgrowth bandgap tuning of III-V quantum well (QW) structures using pulsed-laser-induced disordering (P-LID) in photonic integrated circuits is an attractive alternative to selective growth and regrowth processes. P-LID is impurity free and offers direct writing capability. This technique also requires lower processing cost compared to quantum well intermixing (QWI) realized using ion implantation.

© 2000 IEEE

PDF Article
More Like This
Deep Levels Induced by Impurity Free Vacancy Disordering

N P Johnson, A S Helmy, A C Bryce, and J H Marsh
CThK6 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1998

Novel Quantum Well Intermixing in InGaAs-InGaAsP Laser Structure Using Argon Plasma Exposure

T.C.L. Wee, B. S. Ooi, T. K. Ong, Y. L. Lam, Y. C. Chan, and G.I. Ng
CWF95 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2000

Buried waveguides in a 1.5µm InGaAs/InGaAsP structure fabricated by ion-induced quantum well intermixing

J.E. Haysom, J.J. He, P.J. Poole, Emil S. Koteles, A. Delage, Y. Feng, and S. Charbonneau
IMH19 Integrated Photonics Research (IPR) 1998

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.