Abstract
Semiconductor lasers subject to simultaneous optical injection and microwave modulation have attracted considerable attention with applications in the control and distribution of signals in radar and wireless communications. Many of the current techniques for producing microwave-frequency optical power modulations are however limited by the possible self-pulsating laser instabilities due to optical injection. But recently, these pulsating regimes have been considered as a new way to improve the microwave-frequency modulation characteristics of a semiconductor laser [1]. The new technique takes full advantage of the nonlinear resonant interaction between the pulsating laser intensity and the current modulation. Remarkable locking performance has been achieved under strong injection conditions.
© 2001 EPS
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