Abstract

Extremely low threshold current, low divergence circularly symmetric beam, efficient single-mode fiber coupling, simple packaging, and arrangement in densely packed two-dimensional arrays are features that have made vertical-cavity surface-emitting laser diodes (VCSEL) attractive light sources for applications in optical data transmission and sensoring. VCSELs based on the InAlGaAs-GaAs material system for near-infrared 750 to 1050 nm wavelength emission have already matured and are in many respects superior to conventional edge emitting laser diodes. High performance VCSELs employing selective oxidation for current confinement show above 30 % wallplug efficiency at about 1 mW output power and reliably operate cw up to far above 100 °C. Small active size VCSELs of about 3 μm active diameter exhibit nearly ideal single-mode emission with larger than 30 dB side mode suppression and relative intensity noise approaching or even going beyond the shot noise limit indicating squeezed light generation. Above 5 mW cw single-mode output power is obtained from extended cavity surface-relief devices. Direct current modulation allows for 12.5 Gbit/s optical data generation applied in high-speed optical interconnects and local area networks [1].

© 2001 EPS