Abstract

The ongoing increase in complexity and functionality of semiconductor-b devices (for example laser diodes, VCSEL, and photo-detectors) has prompted a strong need for adequate high-resolution characterization tools. Mapping the relevant properties of devices in at least 2 dimensions with high spatial resolution and sensitivity is essential for successful development of optoelectronic device technology. Several Scanning Probe Microscopy (SPM) methods have emerged as promising tools for this purpose. Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) are sensitive to variations in doping and are capable of delineating p-n junctions, while scanning thermal microscopy (SThM) can be used to map the internal temperature distributions. These specialized modes add to the standard SPM capability of imaging the surface topography with nanometer resolution.

© 2001 EPS