Abstract
The wide band gap semiconductor alloys AlxGai_xN have attracted considerable attention for efficient UV emitters and laser applications. In the presence of high dislocation densities associated with growth on lattice mismatched substrates, it has been shown that carrier localization created by nanoscale compositional inhomogeneities can lead to enhanced emission efficiencies [1,2], we have investigated the origin of the localization effect using near-field optical spectroscopy.
© 2007 IEEE
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