Abstract

We present the first AlInGaN-based Superluminescent Light Emitting Diodes (SLEDs) featuring an InAlN cladding with an emission wavelength above 510nm and state-of-the-art performance. While conventional edge-emitting devices employ non-lattice-matched AlGaN cladding layers (with Al composition of 3-8%), InAlN with an 18% indium composition is lattice-matched to GaN and has a 4-times larger refractive index contrast to waveguiding layers if compared to Al_0.06Ga_0.94N. These properties make InAlN an ideal cladding candidate for Laser Diodes (LDs) and SLEDs. The increased refractive index contrast is crucial in the green spectral range, where nitride-based devices suffer from strongly reduced modal gain and substrate optical leakage, leading to lower efficiency and far-field emission profiles of lower quality.

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