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Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for UV LEDs and Laser Diodes

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Abstract

Non-planar growth of thick AlGaN layers on patterned GaN substrates was investigated to suppress cracking of III-Nitride heterostructures. Preliminary devices with promising characteristics for achieving high-performance UV LEDs and laser diodes were demonstrated.

© 2023 The Author(s)

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