Abstract

The epitaxial growth of III-V materials on silicon is an alternative approach to combining silicon photonics with the active laser source. Substantial progress has been made to reduce the defects created at the III-V / Si interface to a level that has a negligible impact on laser operating current and lifetime, providing quantum dot gain materials are utilized [1,2]. A number of issues remain for the integration of III-V structures with silicon, not least that of reducing the footprint and ensuring the fabrication required is as simple as possible. While the laser reflectors can be fabricated in the silicon here we focus on using the III-V material, which removes the need to have the III-V / Silicon interface and its associated losses within the laser cavity.

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