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InAs/GaAs Quantum Dot Lasers on CMOS-Compatible (001) Silicon by MOCVD Direct Heteroepitaxy

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Abstract

Quantum dot lasers have been demonstrated on CMOS-compatible (001) silicon by MOCVD direct heteroepitaxy. Lasers exhibit room temperature continuous-wave lasing with 46.8 mA threshold current and up to 16 mW single-facet output power.

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