Abstract

3D modifications of crystalline Si (c-Si) by nano-, pico-, or femtosecond lasers at 1550 nm-wavelength are under intensive studies nowadays due to the wide range of potential applications in photonics and optoelectronics [1]. Despite numerous amount of publications, the dependency of the modified region properties on processing laser parameters is still not completely clarified. Here we present an experimental study of local micro-modification produced by 1550 nm-wavelength ns-laser pulses in the bulk c-Si for a wide range of energies, durations, repetition rates, and writing speeds.

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