Bright zero-phonon transition from point defect-stacking fault complexes in silicon carbide nanowires

Jin Hee Lee; Woong Bae Jeon; Jong Sung Moon; Junghyun Lee; Sang-Wook Han; Zoltán Bodrog; Adam Gali; Adam Gali; Sang-Yun Lee; Sang-Yun Lee; Je-Hyung Kim

doi:10.1364/CLEO_QELS.2022.FS4B.1

Conference on Lasers and Electro-Optics
Technical Digest Series (Optica Publishing Group, 2022),
paper FS4B.1
•https://doi.org/10.1364/CLEO_QELS.2022.FS4B.1

Bright zero-phonon transition from point defect-stacking fault complexes in silicon carbide nanowires

Jin Hee Lee, Woong Bae Jeon, Jong Sung Moon, Junghyun Lee, Sang-Wook Han, Zoltán Bodrog, Adam Gali, Sang-Yun Lee, and Je-Hyung Kim

CLEO: QELS_Fundamental Science 2022

San Jose, California United States
15–20 May 2022
ISBN: 978-1-957171-05-0

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Single Emitters and Light-matter Interactions (FS4B)

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J. H. Lee, W. B. Jeon, J. S. Moon, J. Lee, S. Han, Z. Bodrog, A. Gali, S. Lee, and J. Kim, "Bright zero-phonon transition from point defect-stacking fault complexes in silicon carbide nanowires," in Conference on Lasers and Electro-Optics, Technical Digest Series (Optica Publishing Group, 2022), paper FS4B.1.

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Abstract

We investigate a new type of quantum emitters, point defect-stacking fault complexes in silicon carbide nanowires. It record-high bright single-photon emission in silicon carbide and strong zero-phonon transition at even room temperature.

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