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Conferences > CLEO_SI > 2012 > CTh3D > CTh3D.7

Large Area GaN/AlN Nanowire Resonant Tunneling Devices on Silicon

S. Fathololoumi, S. Zhao, H. P. T. Nguyen, M. Djavid, I. Shih, and Z. Mi

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Abstract

We have demonstrated, for the first time, resonant tunneling in large area nanowire devices on Si substrates, wherein GaN/AlN multiple quantum wells are incorporated in nearly-defect free GaN nanowires on a Si-platform.

© 2012 Optical Society of America

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