Abstract
We report an experimental demonstration of a 3 λ-size, silicon waveguide-integrated electro-optic modulator with a record high extinction ratio exceeding 1dB/μm, extremely low insertion loss (−1dB) in the ON-state, and an ultra-broadband (>0.5μm) bandwidth based on free-carrier switching in ITO.
© 2012 Optical Society of America
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