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Indirect lift-off of thin dielectric layers from silicon by femtosecond laser ‘cold’ ablation at the interface

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Thin dielectric layers have been removed from silicon substrates using femtosecond laser pulses via evaporation of few nanometers Si at the interface. Slightly above threshold, this non-thermal ablation process leaves the opened area structurally undamaged.

© 2013 Optical Society of America

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