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Distributed backscattering due to stochastic defects in production O-band Si photonic waveguides

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Abstract

We report backscattering of -19 to -36 dB per 1mm of waveguide length. We find the dependence of backscattering intensity on waveguide geometry and polarization to be consistent with backscattering being dominated by sidewall defects.

© 2016 Optical Society of America

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