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Growth of InGaP Alloy Nanowires with Widely Tunable Bandgaps on Silicon Substrates

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Abstract

InGaP alloy nanowires with In-composition continuously varying from 12% to 73% are demonstrated using chemical vapor deposition on a single silicon substrate, corresponding peak of photoluminescence changing from 580 nm to 780 nm.

© 2017 Optical Society of America

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