Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Room-Temperature Electrically Pumped InP-based Laser Directly Grown on on-axis (001) Silicon

Not Accessible

Your library or personal account may give you access

Abstract

We report the first InAlGaAs/InP multi-quantum-well lasers grown on (001) silicon by MOCVD. Lasing near 1.5 μm was achieved with a Jth = 3.3 kA/cm2 and a high T0 of 133 K.

© 2018 The Author(s)

PDF Article
More Like This
Room Temperature InGaAs/InP Distributed Feedback Laser Directly Grown on Silicon

Zhechao Wang, Bin Tian, Marianna Pantouvaki, Joris Van Campenhout, Clement Merckling, and Dries Van Thourhout
SW4M.3 CLEO: Science and Innovations (CLEO:S&I) 2016

Room temperature continuous wave electrically pumped 1.55 µm quantum well lasers epitaxially grown on (001) Si

Bei Shi, Hongwei Zhao, Lei Wang, Simone Tommaso Šuran Brunelli, Bowen Song, and Jonathan Klamkin
S3H.5 Asia Communications and Photonics Conference (ACP) 2019

Room-Temperature InGaAs/InP Quantum-Well-in-Nanopillar Laser Directly Grown on Silicon

Indrasen Bhattacharya, Fanglu Lu, Gilliard N Malheiros-Silveira, Saniya Deshpande, Kar Wei Ng, and Connie Chang-Hasnain
SF2L.5 CLEO: Science and Innovations (CLEO:S&I) 2016

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.