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Electrical characterization of solar-blind deep-ultraviolet (Al0.28Ga0.72)2O3 Schottky photodetectors grown on silicon by pulsed laser deposition

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This study reports on (Al0.28Ga0.72)2O3-based ultraviolet-C Schottky metal–semiconductor–metal and metal–insulator–metal photodetectors with peak responsivities of 1.17 and 0.40 A/W, respectively, for an incident-light wavelength of 230 nm at 2.50 V reverse-bias.

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