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High-Efficiency Ultraviolet Emission from AlInN/GaN Nanowires Grown by Molecular Beam Epitaxy

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Abstract

The epitaxial growth and characterization of AlInN/GaN core-shell nanowire structures with highly stable emission and high internal quantum efficiency of ~52% in the ultraviolet wavelength range are presented.

© 2020 The Author(s)

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More Like This
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CMU4 CLEO: Science and Innovations (CLEO:S&I) 2011

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