Integrated Graphene Electro-Optic Modulator on Si3N4 with Increasing Bandwidth at Cryogenic Temperatures

Brian S. Lee; Yibo Zhu; Alexandre P. Freitas; Gaurang R. Bhatt; James Hone; Michal Lipson

doi:10.1364/CLEO_SI.2020.STu4O.3

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2020),
paper STu4O.3
•https://doi.org/10.1364/CLEO_SI.2020.STu4O.3

Integrated Graphene Electro-Optic Modulator on Si₃N₄ with Increasing Bandwidth at Cryogenic Temperatures

Brian S. Lee, Yibo Zhu, Alexandre P. Freitas, Gaurang R. Bhatt, James Hone, and Michal Lipson

CLEO: Science and Innovations 2020

Washington, DC United States
10–15 May 2020
ISBN: 978-1-943580-76-7

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Nitride Integrated Photonics (STu4O)

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B. S. Lee, Y. Zhu, A. P. Freitas, G. R. Bhatt, J. Hone, and M. Lipson, "Integrated Graphene Electro-Optic Modulator on Si3N4 with Increasing Bandwidth at Cryogenic Temperatures," in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optica Publishing Group, 2020), paper STu4O.3.

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Abstract

We demonstrate an integrated graphene modulator overcoming the limits of 3D photonic materials at cryogenic temperatures, with a 17% bandwidth improvement from 11.9 GHz at 293 K to 13.9 GHz at 4.9 K.

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