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Photonic integrated erbium-doped silicon nitride amplifiers with intense net gain

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Abstract

We demonstrate photonic integrated erbium-implanted Si3N4 amplifiers that enable record-high 26 dB on-chip net gain and saturation output power exceeding 25 mW, providing an active Si3N4 nanophotonic platform for integrated lasers, LiDARs and mi-crowave photonics.

© 2022 The Author(s)

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