Over 1 Watt THz QCLs with high doping concentration and variable Al composition in active structure

Tsung-Tse Lin; Li Wang; Ke Wang; Ke Wang; Thomas Grange; Stefan Birner; Hideki Hirayama

doi:10.1364/CLEO_SI.2022.SS2D.6

Conference on Lasers and Electro-Optics
Technical Digest Series (Optica Publishing Group, 2022),
paper SS2D.6
•https://doi.org/10.1364/CLEO_SI.2022.SS2D.6

Over 1 Watt THz QCLs with high doping concentration and variable Al composition in active structure

Tsung-Tse Lin, Li Wang, Ke Wang, Thomas Grange, Stefan Birner, and Hideki Hirayama

CLEO: Science and Innovations 2022

San Jose, California United States
15–20 May 2022
ISBN: 978-1-957171-05-0

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Virtual: Power Scaling in Semiconductor Lasers (SS2D)

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T. Lin, L. Wang, K. Wang, T. Grange, S. Birner, and H. Hirayama, "Over 1 Watt THz QCLs with high doping concentration and variable Al composition in active structure," in Conference on Lasers and Electro-Optics, Technical Digest Series (Optica Publishing Group, 2022), paper SS2D.6.

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Abstract

A 1.31 W peak power and 52 mW average power THz QCL is presented by variable Al composition active structure with high doping concentration based on NEGF method design. Device has thick growth active layers and large mesa size with the consideration of heat dissipation.

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