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Terahertz Photoconductive Metasurface Detector with enhanced Two-Step Photon Absorption at 1550 nm

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Abstract

We demonstrate the use of low-temperature grown GaAs (LT-GaAs) metasurface as an ultrafast photoconductive switching element gated with 1550 nm laser pulses. The metasurface is designed to enhance a weak two-step photon absorption at 1550 nm, enabling THz pulse detection.

© 2023 The Author(s)

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