Abstract

An adherent and metallurgically stable metallization system for diamond is presented. The big improvement in metallurgical stability is attributed to the use of a ternary, amorphous Ti-Si-N diffusion barrier. No diffusion between the layers and no delamination of the metallization was observed after annealing the schemes at 400 °C for 100 hours and at 900 °C for 30 minutes. Thermal cycling experiments in dry air from -65 to 150 °C and adhesion tests were performed.

© 1995 Optical Society of America