Abstract

Present work focused on the electrical properties and thermal stability of Au, Ni/W, and Al/W contacts to p-type polycrystalline diamond films, and Ni/Ti/W contact to “n-type” polycrystalline diamond films. The Au, Ni/W, and Al/W contacts to p-type diamond films illustrate perfect ohmic behavior in the as-deposited condition. The contact resistivity is in the range of 10 ^-4 ohm-cm² determined by TLM. On the other hand, Ni/Ti/W contact to “n-type” diamond film shows very large resistance with low leakage current in the as-deposited condition. All these metallization systems exhibit good thermal stability. The contact resistance of the Al/W contact to p-type diamond decreased slightly, however, little change in I-V characteristics was observed for Ni/W and Ni/Ti/W metallizations after annealed at 650°C for 78 hours.

© 1995 Optical Society of America