Abstract

A novel diamond-based hydrogen sensor using Pd/i-diamond/p-diamond metal-insulator-semiconductor structure has been developed. Hydrogen-sensing behaviors of the device have been analyzed as a function of hydrogen partial pressure and temperature by using current-voltage (I-V) and capacitance-voltage-frequency (C-V-F) methods. The effects of the hydrogen adsorption on the device parameters are investigated. The hydrogen sensitivity is high, reproducible, and repeatable over a wide temperature range including room temperature. The use of the diamond film technology opens a door for the development of wide temperature tolerance microelectronic gas sensors.