Abstract

The gauge factor of boron-doped diamond films grown on oxidized Si substrates by hot filament chemical vapor deposition (CVD) reactor was measured by the cantilever beam method. For an annealed film, the gauge factor increases strongly with electric field only in the range of 411-611V/cm. Interestingly, the zero-stress resistivity decreases strongly in this range. Such an increase in gauge factor is not found for an un-annealed film. The field-dependence of gauge factor is reported for the first time. The gauge factor was also measured in the temperature range of 22-80°C for two samples with different doping levels. Preliminary results suggest that the increase of gauge factor with temperature is prominent only for high resistivity.