Abstract

Diamond field emitter diodes with built-in anode are designed, fabricated and characterized. Boron-doped p-type polycrystalline diamond film grown by hot filament chemical vapor deposition (HFCVD) is used as an emitter material. A four mask fabrication process is employed using diamond film technology compatible with Si integrated circuit (IC) processing. Photoresist is used as a sacrificial layer to produce a vacuum gap between anode and cathode. Current versus voltage (I-V) data, measured at 10⁻⁶ Torr, shows Fowler-Nordheim (F-N) field emission behavior. The current density measured at 0.2MV/cm is approximately 0.5A/cm².

© 1995 Optical Society of America