Abstract

We report diamond films deposited at high rates by microwave plasma enhanced chemical vapor deposition. Diamond films have been deposited on Mo substrates in the temperature range of 900-1620°C in 16% (in vol.) methane diluted by hydrogen at pressures around 130 Torr. Oxygen concentration of 1.6 or 3.2% was added. Raman spectra of the deposited films were taken for comparison. The properties of CVD diamond and the effects of substrate preparation, process start-up conditions, and deposition temperature on the growth rate of diamond films are discussed.

© 1995 Optical Society of America