Abstract

We have investigated the deposition of diamond films at relatively low substrate temperatures using an electron cyclotron resonance (ECR) enhanced plasma chemical vapor deposition (CVD) system. Films were separately deposited in a hydrogen ambient from methanol and methane precursor species in the pressure regime of 1.0 Torr. Oxygen was independently added to maintain consistent C/H/O atomic ratios The effect of growth system parameters such as gas composition, temperature, and input microwave power on resultant film morphology was examined using SEM. Structural quality was assessed using X-ray diffraction and Raman spectroscopy. Comparisons were made between growth systems with the same C/H/O atomic ratios for crystalline quality, growth rate, and morphology.

© 1995 Optical Society of America