Abstract

Electron beam pulses were used as a probe for studying diffusion lengths in diamond and gallium nitride layers. The Laser Electron Beam Induced Currents (L-EBIC) are compared to conventional Thermal Electron Beam Induced Current (T-EBIC) measurements. The diffusion lengths measured in GaN were 7.2 µm and 9.9 µm, with no anneal and a 10 minute anneal at 90°C, respectively. Using the L-EBIC and T-EBIC methods, the measured diffusion lengths were 13.9 µm and 11.6 µm, respectively. The diffusion lengths measured in diamond were 92.0 µm and 83.8 µm for the L-EBIC and T-EBIC measurements, respectively.

© 1995 Optical Society of America